Cao, Yang
Tian, Guoliang https://orcid.org/0000-0001-6034-804X
Sandip, Majumdar
Bi, Jinshun
Xi, Kai
Li, Bo
Funding for this research was provided by:
Key R&D Plan of Guangdong Province (2019B010145001)
National Natural Science Foundation of China (61634008)
Youth Innovation Promotion Association of the Chinese Academy of Sciences (2014101)
Article Title: Numerical simulation of vertical tunnelling field-effect transistors charge-trapping memory with TCAD tools
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2021 IOP Publishing Ltd
Publication dates
Date Received: 2020-07-10
Date Accepted: 2021-01-28
Online publication date: 2021-03-04