Takeuchi, Tetsuya https://orcid.org/0000-0002-2378-2610
Kamiyama, Satoshi
Iwaya, Motoaki
Akasaki, Isamu
Funding for this research was provided by:
the MEXT Private University Research Branding Project
the MEXT “Research and development of next-generation semiconductor to realize energy-saving society” Program (JPJ005357)
the JST CREST (16815710)
the JSPS KAKENHI for Innovative Areas (16H06416)
the JSPS KAKENHI for Scientific Research A (20H00353)
Article Title: GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2021 IOP Publishing Ltd
Publication dates
Date Received: 2020-11-20
Date Accepted: 2021-03-03
Online publication date: 2021-04-30