Mauder, C https://orcid.org/0000-0002-6305-4618
Hahn, H
Marx, M
Gao, Z
Oligschlaeger, R
Zweipfennig, T
Noculak, A
Negra, R
Kalisch, H
Vescan, A
Heuken, M
Funding for this research was provided by:
ECSEL (826392)
European Union
Federal Ministry of Education (16ESE0416)
Article Title: Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2021 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-02-10
Date Accepted: 2021-05-19
Online publication date: 2021-06-03