Chen, Ding-Yuan https://orcid.org/0000-0003-0020-8859
Persson, Axel R https://orcid.org/0000-0002-0399-8369
Wen, Kai-Hsin
Sommer, Daniel
Grünenpütt, Jan
Blanck, Hervé
Thorsell, Mattias https://orcid.org/0000-0003-0415-7219
Kordina, Olof https://orcid.org/0000-0002-8265-8230
Darakchieva, Vanya https://orcid.org/0000-0002-8112-7411
Persson, Per O Å https://orcid.org/0000-0001-9140-6724
Chen, Jr-Tai https://orcid.org/0000-0003-3943-0000
Rorsman, Niklas https://orcid.org/0000-0001-9916-7633
Funding for this research was provided by:
European Union’s Horizon 2020 (823260)
Swedish Foundation for Strategic Research (EM16-0024)
Swedish Research Council VR (2016-00889)
VINNOVA (2016-05190)
Article Title: Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2022 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-11-18
Date Accepted: 2022-01-13
Online publication date: 2022-01-25