Wang, Ting-Ting https://orcid.org/0000-0002-8564-9575
Wang, Xiao https://orcid.org/0000-0001-5048-2616
Cui, Zhen-Hai
Hong, Wen
Li, Yang
Li, Liu-An
He, Yue
Jia, Mao
Guo, Chen
Bai, Li-Hua https://orcid.org/0000-0001-8860-8712
Geng, Ying-Zhao
Hao, Yue
Ao, Jin-Ping https://orcid.org/0000-0003-1685-0168
Funding for this research was provided by:
National Natural Science Foundation of China (61991442)
National Natural Science Foundation (61804119)
Postdoctoral Science Foundation of China (2018M643576)
Research and Development Program of China (2017YFB0403000)
Article Title: Metal-nitride dual-anode AlGaN/GaN heterostructure Schottky barrier diodes with tunable turn-on voltage and reverse leakage current
Journal Title: Semiconductor Science and Technology
Article Type: paper
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Publication dates
Date Received: 2021-11-02
Date Accepted: 2022-02-16
Online publication date: 2022-03-03