Shi, Zhongyu
Xiang, Xueqiang
Zhang, Haochen
He, Qiming
Jian, Guangzhong
Zhou, Kai
Zhou, Xuanze
Xing, Chong
Xu, Guangwei
Long, Shibing https://orcid.org/0000-0001-6220-4461
Funding for this research was provided by:
Center for Micro and Nanoscale Research and Fabrication of University of Science and Technology of China
Key Research Program of Frontier Sciences of CAS (QYZDB-SSW-JSC048)
Fundamental Research Plan under Grant (JCKY2020110B010)
National Natural Science Foundation of China Grant (61925110)
the Opening Project of Key Laboratory of Microelectronics Devices & Integration Technology in Institute of Microelectronics of CAS
the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS
Article Title: Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal
Journal Title: Semiconductor Science and Technology
Article Type: paper
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Publication dates
Date Received: 2021-11-24
Date Accepted: 2022-04-08
Online publication date: 2022-04-22