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Chemical imaging of oxide confinement layers in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mtext>GaAs</mml:mtext> </mml:mrow> <mml:mrow> <mml:mo>/</mml:mo> </mml:mrow> <mml:msub> <mml:mrow> <mml:mtext>Al</mml:mtext> </mml:mrow> <mml:mrow> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mtext>Ga</mml:mtext> </mml:mrow> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> <mml:mrow> <mml:mtext>As</mml:mtext> </mml:mrow> </mml:math> VCSELs

Crossref DOI link: https://doi.org/10.1088/1361-6641/ac7070

Published Online: 2022-06-08

Published Print: 2022-07-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Mokhtari, Merwan https://orcid.org/0000-0003-1327-0088
Pagnod-Rossiaux, Philippe

Levallois, Christophe

Pofelski, Alexandre

Laruelle, François

Botton, Gianluigi A

Landesman, Jean-Pierre https://orcid.org/0000-0003-3330-7407
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Text and Data Mining valid from 2022-06-08
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Article Title: Chemical imaging of oxide confinement layers in GaAs / Al x Ga 1 − x As VCSELs

Journal Title: Semiconductor Science and Technology

Article Type: paper

Copyright Information: © 2022 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

Publication dates

Date Received: 2022-04-05

Date Accepted: 2022-05-17

Online publication date: 2022-06-08

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