Caudevilla, D https://orcid.org/0000-0002-8479-2644
Algaidy, S https://orcid.org/0000-0002-1164-6267
Pérez-Zenteno, F https://orcid.org/0000-0002-6509-6010
Duarte-Cano, S https://orcid.org/0000-0003-4184-0332
García-Hernansanz, R https://orcid.org/0000-0002-8419-8012
Olea, J https://orcid.org/0000-0002-7200-0371
San Andrés, E https://orcid.org/0000-0003-3432-9915
del Prado, A https://orcid.org/0000-0003-0633-9462
Barrio, R https://orcid.org/0000-0001-7662-0714
Torres, I https://orcid.org/0000-0002-9971-3988
García-Hemme, E https://orcid.org/0000-0001-5328-8341
Pastor, D https://orcid.org/0000-0003-2975-3973
Funding for this research was provided by:
FEDER Funds Comunidad Autónoma de Madrid (P2018/EMT-4308)
Consejo Nacional de Ciencia y Tecnología (786327)
Ministerio de Ciencia e Innovación (PID2019-109215RB-C42)
Article Title: Electrical transport properties in Ge hyperdoped with Te
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2022 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2022-08-05
Date Accepted: 2022-10-14
Online publication date: 2022-11-01