Li, Haiou https://orcid.org/0000-0001-8528-0635
Kang, Dongxu
Qu, Kangchun
Liu, Xingpeng
Wan, Rongqiao https://orcid.org/0000-0002-1052-5199
Funding for this research was provided by:
Guangxi Science and Technology Planning Project (AD22035155)
Project of Promoting the Basic Ability of Scientific Research of Young and Middle-aged Teachers in Universities of Guangxi (2022KY0187)
China Postdoctoral Science Foundation (2020M683626XB)
Guangxi Innovation Research Team Project (2018GXNSFGA281004)
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (DH202213)
Yunnan Province major science and technology projects (202102AB080008-2)
National Natural Science Foundation of China (62174041)
Article Title: Design of the GaN based CAVET with SiO2–InGaN hybrid current blocking layer
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2022 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2022-07-30
Date Accepted: 2022-11-25
Online publication date: 2022-12-13