Lin, Xiaoyu https://orcid.org/0000-0001-7645-3370
Jin, Jidong https://orcid.org/0000-0002-8400-0053
Kim, Jaekyun https://orcid.org/0000-0001-9726-8166
Xin, Qian https://orcid.org/0000-0003-4605-5894
Zhang, Jiawei https://orcid.org/0000-0002-1624-9535
Song, Aimin https://orcid.org/0000-0001-6550-518X
Funding for this research was provided by:
National Natural Science Foundation of China (62074094)
Natural Science Foundation of Jiangsu Province (BK20200221)
Hanyang University (HY-2022-2831)
Article Title: Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics
Journal Title: Semiconductor Science and Technology
Article Type: paper
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Publication dates
Date Received: 2022-10-12
Date Accepted: 2023-02-08
Online publication date: 2023-02-17