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Homoepitaxial growth of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mfenced> <mml:mrow> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>02</mml:mn> </mml:mrow> </mml:mfenced> </mml:math> β-Ga2O3 by halide vapor phase epitaxy

Crossref DOI link: https://doi.org/10.1088/1361-6641/acf241

Published Online: 2023-08-31

Published Print: 2023-10-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Oshima, Yuichi https://orcid.org/0000-0001-8293-4891
Oshima, Takayoshi
Funding

Funding for this research was provided by:

TEPCO Memorial Foundation
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Text and Data Mining valid from 2023-08-31
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Article Title: Homoepitaxial growth of 1 ˉ 02 β-Ga2O3 by halide vapor phase epitaxy

Journal Title: Semiconductor Science and Technology

Article Type: paper

Copyright Information: © 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

Publication dates

Date Received: 2023-06-20

Date Accepted: 2023-08-21

Online publication date: 2023-08-31

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