Qu, Haolan https://orcid.org/0000-0002-2907-6565
Chen, Jiaxiang https://orcid.org/0000-0001-6793-4025
Zhang, Yu https://orcid.org/0000-0002-5017-6771
Sui, Jin https://orcid.org/0000-0001-8884-8097
Zhang, Ruohan
Zhou, Junmin https://orcid.org/0009-0001-4630-9869
Lu, Xing https://orcid.org/0000-0001-5808-9552
Zou, Xinbo https://orcid.org/0000-0002-9031-8519
Funding for this research was provided by:
ShanghaiTech University Startup Fund (2017F0203-000-14)
National Natural Science Foundation of China (52131303)
CAS Strategic Science and Technology Program (XDA18000000)
Natural Science Foundation of Shanghai (22ZR1442300)
Article Title: Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-04-24
Date Accepted: 2023-09-01
Online publication date: 2023-09-11