Li, Yunkai https://orcid.org/0000-0002-4401-4813
Zhao, Siqi https://orcid.org/0000-0001-6606-6676
Yang, Shangyu https://orcid.org/0000-0002-7166-2779
Guo, Ning
Yuan, Weilong
Pei, Yicheng
Yan, Guoguo
Liu, Xingfang https://orcid.org/0000-0002-0694-2512
Funding for this research was provided by:
National Key Research and Development Program of China (2021YFB3401603)
National Natural Science Foundation of China (12175236)
Key-Area Research and Development Program of Guangdong Province (2021B0101300005)
Article Title: Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-05-09
Date Accepted: 2023-09-06
Online publication date: 2023-09-14