Lv, Xiurui
Liu, Guipeng https://orcid.org/0000-0002-2916-4418
Mao, Bangyao https://orcid.org/0000-0001-5006-5089
Huang, Heyuan
Zhao, Guijuan https://orcid.org/0000-0002-8496-1612
Yang, Jianhong https://orcid.org/0000-0003-0865-9830
Funding for this research was provided by:
Gansu Province Natural Science Foundation (20JR5RA287)
National Natural Science Foundation of China (6187410862074012)
Gansu Provincial Scientific and Technologic Planning Program (22ZD6GE016)
Funds for the Central Universities (lzujbky-2021-58)
Article Title: α-In2Se3/Nb-doped MoSh2 heterojunction: a first-principles study
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-06-03
Date Accepted: 2023-11-17
Online publication date: 2023-11-24