Xie, Changjiang
Li, Yue
Xu, Chi https://orcid.org/0000-0002-3374-1580
Wang, Yixin
Cong, Hui
Xue, Chunlai
Funding for this research was provided by:
Key Research Program of Frontier Sciences, CAS (ZDBS-LY-JSC008)
National Key Research and Development Program of China (2021YFB2206503)
CAS Project for young scientists in Basic Research (YSBR-056)
National Natural Science Foundation of China (62125405)
Article Title: Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions
Journal Title: Semiconductor Science and Technology
Article Type: paper
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Publication dates
Date Received: 2023-06-20
Date Accepted: 2023-12-12
Online publication date: 2023-12-20