Wu, Nengtao https://orcid.org/0000-0002-6814-7039
Xing, Zhiheng
Luo, Ling
Li, Guoqiang https://orcid.org/0000-0002-1493-6657
Funding for this research was provided by:
National Key Research and Development Project (2022YFB3604500)
Technology Development Project of Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (2022SX-TD017)
Sail Plan of Guangdong Province (2017YT05C007)
Article Title: Normally-off GaON/p-GaN gate HEMTs with selective plasma oxidation: from structural characterization, performance improvement to physical mechanism
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-01-15
Date Accepted: 2024-03-07
Online publication date: 2024-03-18