Chen, Zengfa
Yue, Wen
Zhu, Renqiang
Wang, Min
Zhu, Xi
Lin, Jinpei
Huang, Shuangwu
Liu, Xinke https://orcid.org/0000-0002-5367-6923
Funding for this research was provided by:
Guangdong Major Project of Basic and Applied Basic Research (2023B0303000012)
Shenzhen Science and Technology Program (JCYJ20220818102809020)
Guangdong Science Foundation for Distinguished Young Scholars (2022B1515020073)
Article Title: Study of drain-induced channel effects in vertical GaN junction field-effect transistors
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2023-11-22
Date Accepted: 2024-05-01
Online publication date: 2024-05-23