Liu, Shijin
Wang, Ying https://orcid.org/0000-0003-0790-8153
Fei, Xinxing https://orcid.org/0000-0003-1127-5918
Yu, Chenghao https://orcid.org/0000-0002-2542-944X
Guo, Haomin
Funding for this research was provided by:
National R&D Program for Major Research Instruments of China (62027814)
Basic Research Development Program of Liaoning Province of China (2022JH2/101300266)
Article Title: Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-01-18
Date Accepted: 2024-06-07
Online publication date: 2024-06-18