Hieu, Le Trung https://orcid.org/0000-0002-3195-7142
Rathaur, Shivendra K
Lu, Chee-How
Weng, You-Chen
Lin, Yuan
Lin, Chun-Hsiung
Chen, Quark Yungsung
Chang, Edward Yi
Funding for this research was provided by:
Ministry of Education
Co-creation Platform of the Industry Academia Innovation School, NYCU
National Science and Technology Council (NSTC 112-2218-E-A49-018)
Industry partners in Taiwan
National Development Fund
Article Title: Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2024 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2024-02-01
Date Accepted: 2024-06-13
Online publication date: 2024-07-11