Funding for this research was provided by:
Deutsche Forschungsgemeinschaft (FKZ: WU 172/7-1)
European Space Agency (ESA ITT AO/1-10215/20/NL/CLP)
Forschungsfabrik Mikroelektronik Deutschland (16FMD02)
Article Title: Si-implantation for low ohmic contact resistances in RF GaN HEMTs
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2024 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2024-05-15
Date Accepted: 2024-08-19
Online publication date: 2024-08-28