Yang, Fan
Li, Xinxin
Ren, Yuke
Li, Shuti https://orcid.org/0000-0002-8871-1741
Zheng, Shuwen https://orcid.org/0000-0003-4452-5880
Funding for this research was provided by:
Science and Technology Project of Guangzhou City (201607010250)
National Natural Science Foundation of China (62374062)
Article Title: Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2024-12-01
Date Accepted: 2025-04-17
Online publication date: 2025-04-25