Lv, Shaocong
Li, Xianglong
Zheng, Shuaiying
Zhang, Tan
Zhang, Baoqing
Lin, Yu
Wang, Yiming
Wang, Fei
Xin, Qian https://orcid.org/0000-0003-4605-5894
Li, Yuxiang https://orcid.org/0000-0002-9457-769X
Song, Aimin https://orcid.org/0000-0001-6550-518X
Jin, Jidong https://orcid.org/0000-0002-8400-0053
Zhang, Jiawei https://orcid.org/0000-0002-1624-9535
Funding for this research was provided by:
Shandong University (TS20230207)
Natural Science Foundation of Shandong Province (ZR2022ZD04)
State Key Lab of Processors, Institute of Computing Technology (CLQ202402)
National Natural Science Foundation of China (62204143)
National Key Research and Development Program of China (2022YFB3603900)
Article Title: Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2025-06-10
Date Accepted: 2025-09-01
Online publication date: 2025-09-15