Armstrong, Andrew M https://orcid.org/0000-0003-0391-6009
Anderson, Evan M https://orcid.org/0000-0002-3771-3085
Caravello, Lisa N
Garcia, Eduardo
Klesko, Joseph P https://orcid.org/0000-0003-3989-8009
Hawkins, Samuel D https://orcid.org/0000-0002-4705-1628
Shaner, Eric A https://orcid.org/0000-0002-3657-2524
Klem, John F https://orcid.org/0000-0002-0598-5780
Muhowski, Aaron J https://orcid.org/0000-0002-5659-6136
Funding for this research was provided by:
U.S. Department of Energy’s National Nuclear Security Administration (DE-NA0003525)
Laboratory Directed Research and Development Program
Sandia National Laboratories
Article Title: Optical characterization of deep-level defects in n-type Al x In y Ga 1− x − y P for the development of solid-state photomultiplier analogs
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2025 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2025-09-03
Date Accepted: 2025-11-04
Online publication date: 2025-11-21