Yang, Fei https://orcid.org/0000-0003-1912-8103
Shu, Qingsong https://orcid.org/0009-0005-2188-0945
Zhu, Houwei https://orcid.org/0009-0005-9570-8662
Liu, Junlong
Xie, Yujie https://orcid.org/0009-0004-9831-4223
Cheng, Yixiang https://orcid.org/0009-0005-0308-9260
Zhao, Xuanyang
Funding for this research was provided by:
National Natural Science Foundation of China (62004001)
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Article Title: Forming mechanism of hafnium oxide-based resistive random access memory controlled by consistent sidewall stack structure
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2025-03-20
Date Accepted: 2025-12-08
Online publication date: 2025-12-22