Wang, Yaoting
Wu, Yongyu
Wang, Hai
Wang, Zenan
Xu, Kai https://orcid.org/0000-0001-7792-8235
Gao, Dawei https://orcid.org/0009-0002-7786-1506
Funding for this research was provided by:
National Natural Science Foundation of China (62204217)
Zhejiang Province Key Research and Development Programs (2024C01002)
Article Title: Impact of active area and gate line width roughness on SRAM stability: role of low-frequency noise and process variability in advanced IC manufacturing
Journal Title: Semiconductor Science and Technology
Article Type: paper
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Publication dates
Date Received: 2025-11-08
Date Accepted: 2026-04-08
Online publication date: 2026-05-11