Chen, Peng
Xiang, Jianyong
Yu, Hua
zhang, Jing
Xie, Guibai
Wu, Shuang
Lu, Xiaobo
Wang, Guole
Zhao, Jing
Wen, Fusheng
Liu, Zhongyuan
Yang, Rong
Shi, Dongxia
Zhang, Guangyu
Funding for this research was provided by:
National Basic Research Program of China (2012CB921302)
National Basic Research Program of China (2013CB934500)
National Basic Research Program of China (2013CBA01600)
Strategic Priority Research Program(B)of the Chinese Academy of Sciences (XDB07010100)
National Science Foundation of China (111743)
National Science Foundation of China (11204358)
National Science Foundation of China (61325021)
National Science Foundation of China (61390503)
National Science Foundation of China (91223204)
Journal title: 2D Materials
Article type: paper
Article title: Gate tunable MoS 2 –black phosphorus heterojunction devices
Copyright information: © 2015 IOP Publishing Ltd
Publication dates
Date received: 2015-03-12
Date accepted: 2015-06-17
Online publication date: 2015-07-15