Hu, Xiaohui
Wang, Yifeng
Shen, Xiaodong
Krasheninnikov, Arkady V https://orcid.org/0000-0003-0074-7588
Sun, Litao https://orcid.org/0000-0002-2750-5004
Chen, Zhongfang https://orcid.org/0000-0002-1445-9184
Funding for this research was provided by:
The open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University
NSF-CREST Center for Innovation, Research and Education in Environmental Nanotechnology (HRD-1736093)
The Priority Academic Program Development of Jiangsu Higher Education Institutions
The Natural Science Foundation of Jiangsu Province (BK20160694)
The National Natural Science Foundation of China (11604047, 51672127)
Journal title: 2D Materials
Article type: lett
Article title: 1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-02-21
Date accepted: 2018-05-29
Online publication date: 2018-06-13