Hu, Xiaohui
Wang, Yifeng
Shen, Xiaodong
Krasheninnikov, Arkady V https://orcid.org/0000-0003-0074-7588
Sun, Litao https://orcid.org/0000-0002-2750-5004
Chen, Zhongfang https://orcid.org/0000-0002-1445-9184
Funding for this research was provided by:
The open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University
NSF-CREST Center for Innovation, Research and Education in Environmental Nanotechnology (HRD-1736093)
The Priority Academic Program Development of Jiangsu Higher Education Institutions
The Natural Science Foundation of Jiangsu Province (BK20160694)
The National Natural Science Foundation of China (11604047)
The National Natural Science Foundation of China (51672127)
Journal title: 2D Materials
Article type: lett
Article title: 1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-02-21
Date accepted: 2018-05-29
Online publication date: 2018-06-13