Funding for this research was provided by:
National Natural Science Foundation of China (51602305)
46th Research Institute of China Electronics Technology Group Corporation Program (CJ20160902)
National Key Research and Development Program of China (2016YFA0200400)
Journal title: Materials Research Express
Article type: paper
Article title: A coupling effects of vacancy and Al (Ga, In) dopant on electronic structures of hexagonal boron nitride monolayer
Copyright information: © 2017 IOP Publishing Ltd
Publication dates
Date received: 2017-09-21
Date accepted: 2017-10-16
Online publication date: 2017-10-31