Ding, Cheng https://orcid.org/0000-0003-0198-4999
Dai, Yuehua
Ma, Chengzhi
Lu, Wenjuan
Wang, Feifei
Zeng, Yejuan
Funding for this research was provided by:
Natural Science Foundation of Anhui Province (No.1708085QF144)
National Natural Science Foundation of China (No.61874001)
the Doctoral Research Funding Project of Anhui University (Y040418177)
Journal title: Materials Research Express
Article type: paper
Article title: The influence of the resistance layer dimension and interface doping on the electrical properties of aGNR/NiO/aGNR-structured resistive random access memory
Copyright information: © 2019 IOP Publishing Ltd
Publication dates
Date received: 2019-05-09
Date accepted: 2019-08-30
Online publication date: 2019-09-13