Kuai, Jiajing
Zhang, Weiwei
Wu, Shuyi
Sheng, Jingye
Cheng, Xinli
Mao, Hongmin
Li, Yang
Zhang, Jinlei https://orcid.org/0000-0003-3898-6322
Ma, Chunlan https://orcid.org/0000-0002-9944-4255
Funding for this research was provided by:
Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJB150018)
National Natural Science Foundation of China (61904119)
Natural Science Foundation of Jiangsu Province (BK20190948)
Jiangsu Key Disciplines of the Thirteenth Five-Year Plan (20168765)
Natural Science Foundation of Jiangsu Higher Education Institutions (18KJA470004)
Six Talent Peaks Project of Jiangsu Province, China (XCL-078)
PAPD, USTS Cooperative Innovation Center, and Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices (SZS201611)
Article Title: Solid-state memory of ferroelectric tunnel junctions based on distorted ReS2
Journal Title: Materials Research Express
Article Type: paper
Copyright Information: © 2021 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2021-02-21
Date Accepted: 2021-04-13
Online publication date: 2021-05-04