Article Title: Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology
Journal Title: Materials Research Express
Article Type: paper
Copyright Information: © 2021 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2021-09-13
Date Accepted: 2021-11-30
Online publication date: 2021-12-10