Funding for this research was provided by:
Ministry of Science and Technology (MOST 109-2622-E-150 -023)
Article Title: Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure
Journal Title: Materials Research Express
Article Type: paper
Copyright Information: © 2021 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2021-09-24
Date Accepted: 2021-12-03
Online publication date: 2021-12-22