Li, Jun https://orcid.org/0000-0003-0124-1757
Wen, Shengkai
Jiang, Dongliang
Li, Linkang
Zhang, Jianhua https://orcid.org/0000-0001-8061-1861
Funding for this research was provided by:
Natural Science Foundation of China (61774100)
the Open Fund of Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University
National Science Foundation for Distinguished Young Scholars of China (51725505)
Shanghai Science and Technology Commission (18JC1410402)
the development fund for Shanghai talents (No.2021003)
Article Title: Fully solution-processed InSnO/HfGdO X thin-film transistor for light-stimulated artificial synapse
Journal Title: Flexible and Printed Electronics
Article Type: paper
Copyright Information: © 2022 IOP Publishing Ltd
Publication dates
Date Received: 2021-10-30
Date Accepted: 2022-01-14
Online publication date: 2022-02-02