Funding for this research was provided by:
National Natural Science Foundation of China (61604057)
Natural Science Foundation of Guangdong Province (2016A030313474)
Journal title: Journal of Physics Communications
Article type: paper
Article title: Effects of annealing temperature of NbLaO gate dielectric on electrical properties of ZnO thin-film transistor
Copyright information: © 2017 The Author(s). Published by IOP Publishing Ltd
License information: cc-by Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2017-05-05
Date accepted: 2017-09-06
Online publication date: 2017-10-17