Ma, Xiaoxuan https://orcid.org/0009-0003-5504-8829
Luan, Suzhen https://orcid.org/0009-0000-0860-3373
Funding for this research was provided by:
National Natural Science Foundation of China (1237042061)
Article Title: Current blocking layer enables enhanced NiO/β-Ga2O3 heterojunction vertical MOSFET with a higher power figure of merit
Journal Title: Engineering Research Express
Article Type: paper
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Publication dates
Date Received: 2024-09-10
Date Accepted: 2024-12-27
Online publication date: 2025-01-10