Kurtz, A
Hierro, A
Lopez-Ponce, M
Tabares, G
Chauveau, J M
Funding for this research was provided by:
Agence Nationale de la Recherche (ANR 11-JS09-014 “HENOPOIN2)
Ministerio de Economía y Competitividad (BES-2012-051882, TEC2011-28076-C02-01, TEC2014-60173-C2-2)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2015-09-29
Date accepted: 2016-01-19
Online publication date: 2016-02-04