Gu, Wen http://orcid.org/0000-0001-7248-3687
Lu, Yi
Lin, Rongyu http://orcid.org/0000-0001-5780-2838
Guo, Wenzhe
Zhang, Zihui http://orcid.org/0000-0003-0638-1118
Ryou, Jae-Hyun http://orcid.org/0000-0002-7397-6616
Yan, Jianchang
Wang, Junxi
Li, Jinmin
Li, Xiaohang http://orcid.org/0000-0002-4434-365X
Funding for this research was provided by:
KAUST Baseline Fund (BAS/1/1664-01-01)
National Natural Sciences Foundation of China (61527814)
National Key R&D Program of China (2016YFB0400800)
Youth Innovation Promotion Association of the Chinese Academy of Sciences (2017157)
Competitive Research Grants (URF/1/3437-01-01)
GCC Research Council Grant (REP/1/3189-01-01)
Beijing Nova Program (Z181100006218007)
Article Title: BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
Journal Title: Journal of Physics D: Applied Physics
Article Type: paper
Copyright Information: © 2021 IOP Publishing Ltd
Publication dates
Date Received: 2020-10-10
Date Accepted: 2021-01-22
Online publication date: 2021-02-12