Funding for this research was provided by:
National Research Foundation of Korea (2015M3A7B7045496, 2017R1A2A2A05022574)
Journal title: Nanotechnology
Article type: paper
Article title: Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu–Sn alloy-based conductive-bridge random access memory
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-03-04
Date accepted: 2018-06-18
Online publication date: 2018-07-17