Liu, Zhiqiang http://orcid.org/0000-0002-5341-0463
Yi, Xiaoyan
Wang, Liancheng http://orcid.org/0000-0002-2100-3089
Wei, Tongbo
Yuan, Guodong
Yan, Jianchang
Wang, Junxi
Li, Jinmin
Shi, Yi
Zhang, Yong http://orcid.org/0000-0003-4781-1583
Funding for this research was provided by:
National Key Research and Development Program of China (2016YFB0400102)
Beijing Municipal Science and Technology Project (Z161100002116032)
Guangzhou Science & Technology Project of Guangdong Province, China (201704030106 and 2016201604030035)
ARO/Electronics (W911NF-16-1-0263)
Bissell Distinguished Professorship,Innovation-Driven Project of Central South University (No. 2018CX001)
Project of State Key Laboratory of High Performance Complex Manufacturing, Central South University (No. ZZYJKT2018-01)
Professorship Start-up Funding (No. 217056)
Journal title: Semiconductor Science and Technology
Article type: paper
Article title: Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes
Copyright information: © 2018 IOP Publishing Ltd
Publication dates
Date received: 2018-08-05
Date accepted: 2018-08-21
Online publication date: 2018-10-11