Strempel, Klaas http://orcid.org/0000-0001-8318-1916
Römer, Friedhard
Yu, Feng
Meneghini, Matteo
Bakin, Andrey
Wehmann, Hergo-Heinrich
Witzigmann, Bernd
Waag, Andreas
Funding for this research was provided by:
Germany’s Excellence Strategy EXC-2123 Quantum Frontiers (390837967)
Deutsche Forschungsgemeinschaft (284575374)
Article Title: Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel
Journal Title: Semiconductor Science and Technology
Article Type: paper
Copyright Information: © 2020 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2020-08-14
Date Accepted: 2020-10-29
Online publication date: 2020-11-17