Funding for this research was provided by:
the National Natural Science Foundation of China Programand and the Industrial Research Project of Guizhou Province (11164004)
Article Title: Theoretical study on photoelectric properties of FAPbI3 doped with Ge
Journal Title: Materials Research Express
Article Type: paper
Copyright Information: © 2020 The Author(s). Published by IOP Publishing Ltd
Publication dates
Date Received: 2020-05-14
Date Accepted: 2020-06-22
Online publication date: 2020-11-18