Hu, Zhuangzhuang
Zhao, Chunyong
Feng, Qian
Feng, Zhaoqing
Jia, Zhitai
Lian, Xiaozheng
Lai, Zhanping
Zhang, Chunfu
Zhou, Hong
Zhang, Jincheng
Hao, Yue
Funding for this research was provided by:
the national key research and development program of China (2018YFB040650)
the national natural science foundation of China (61774116;61974112;61974115)
national 111 centre (B12026)
Article Title: The Investigation of β-Ga2O3 Schottky Diode with Floating Field Ring Termination and the Interface States
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited
Publication dates
Date Received: 2019-11-19
Date Accepted:
Online publication date: 2020-01-07