Fares, Chaker
Xian, Minghan
Smith, David J.
McCartney, M. R.
Kneiß, Max
von Wenckstern, Holger
Grundmann, Marius
Tadjer, Marko
Ren, Fan
Pearton, S. J. https://orcid.org/0000-0001-6498-1256
Funding for this research was provided by:
National Science Foundation (DMR 1856662)
European Social Fund (SAB 100310460)
Defense Threat Reduction Agency (HDTRA1-17-1-011)
Office of Naval Research (N00014-15-1-2392)
Article Title: Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited
Publication dates
Date Received: 2020-01-28
Date Accepted:
Online publication date: 2020-04-06