Funding for this research was provided by:
Shanghai Municipal Education Commission (19CG50)
National Natural Science Foundation of China (61904107)
Science and Technology Commission of Shanghai Municipality (17142200100)
Article Title: Communication—Wide Bandgap Tin Oxide Thin Film Transistor by Doping Rare Earth Element Europium
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2020 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-05-27
Date Accepted:
Online publication date: 2020-07-13