Funding for this research was provided by:
Science & Technology Planned Project, Hebei Province of China (15211017D)
Hundred Talent Project of Hebei Province of China (E2013100006)
Article Title: Damage-Free Transfer of GaN-Based Light-Emitting Devices and Reuse of Sapphire Substrate
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2020 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2020-03-28
Date Accepted:
Online publication date: 2020-08-10