Tabata, Toshiyuki https://orcid.org/0000-0003-4923-5663
Karim, Huet
Rozé, Fabien
Mazzamuto, Fulvio
Sermage, Bernard https://orcid.org/0000-0002-2151-8824
Kopalidis, Petros
Roh, Dwight
Funding for this research was provided by:
Electronic Components and Systems for European Leadership (875999)
Article Title: Dopant Redistribution and Activation in Ga Ion-Implanted High Ge Content SiGe by Explosive Crystallization during UV Nanosecond Pulsed Laser Annealing
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2021 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited
Publication dates
Date Received: 2020-12-04
Date Accepted:
Online publication date: 2021-02-12