Sun, Chong-Jhe
Yan, Siao-Cheng
Lin, Yi-Wen
Tsai, Meng-Ju
Tsai, Yu-Chen
Chou, Chuan-Pu
Hou, Fu-Ju
Luo, Guang-Li
Wu, Yung-Chun https://orcid.org/0000-0001-9409-6792
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (109-2221-E-007-031-MY3)
Article Title: Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2021 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-04-01
Date Accepted:
Online publication date: 2021-06-03