Sun, Chong-Jhe
Yan, Siao-Cheng
Lin, Yi-Wen
Tsai, Meng-Ju
Tsai, Yu-Chen
Chou, Chuan-Pu
Hou, Fu-Ju
Luo, Guang-Li
Wu, Yung-Chun https://orcid.org/0000-0001-9409-6792
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (109-2221-E-007-031-MY3)
Article Title: Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2021 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited
Publication dates
Date Received: 2021-04-01
Date Accepted:
Online publication date: 2021-06-03