Li, Yan
Cheng, Xiaohong
Zhao, Fei
Zhong, Zhaoyang
Liu, Haoyan
Zan, Ying
Li, Tianshuo
Li, Yongliang https://orcid.org/0000-0002-5590-861X
Funding for this research was provided by:
CAS Pioneer Hundred Talents Program (NA)
Foundation of President of the Institute of Microelectronics, Chinese Academy of Sciences (NA)
Natural Science Foundation of Beijing Municipality (4202078)
National Key Project of Science and Technology of China (2017ZX02315001-002)
Education Reform Project of Beijing Information Science and Technology University (2020JGYB41)
Article Title: Fabrication of High-Mobility Si0.7Ge0.3 Channel FinFET for Optimization of Device Electrical Performance
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2021 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited
Publication dates
Date Received: 2021-05-20
Date Accepted:
Online publication date: 2021-07-07