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Wrap-Gate CNT-MOSFET Based SRAM Bit-Cell with Asymmetrical Ground Gating and Built-In Read-Assist Schemes for Application in Limited-Energy Environments

Crossref DOI link: https://doi.org/10.1149/2162-8777/ac5c84

Published Online: 2022-03-29

Published Print: 2022-03-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Darabi, Abdolreza https://orcid.org/0000-0002-2461-3245
Salehi, Mohammad Reza https://orcid.org/0000-0002-7251-3564
Abiri, Ebrahim https://orcid.org/0000-0001-5597-3166
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Article Title: Wrap-Gate CNT-MOSFET Based SRAM Bit-Cell with Asymmetrical Ground Gating and Built-In Read-Assist Schemes for Application in Limited-Energy Environments

Journal Title: ECS Journal of Solid State Science and Technology

Article Type: paper

Copyright Information: © 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited

Publication dates

Date Received: 2022-01-29

Date Accepted:

Online publication date: 2022-03-29

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