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Wrap-Gate CNT-MOSFET Based SRAM Bit-Cell with Asymmetrical Ground Gating and Built-In Read-Assist Schemes for Application in Limited-Energy Environments

Crossref DOI link: https://doi.org/10.1149/2162-8777/ac5c84

Published Online: 2022-03-29

Published Print: 2022-03-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Darabi, Abdolreza https://orcid.org/0000-0002-2461-3245
Salehi, Mohammad Reza https://orcid.org/0000-0002-7251-3564
Abiri, Ebrahim https://orcid.org/0000-0001-5597-3166
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Article Title: Wrap-Gate CNT-MOSFET Based SRAM Bit-Cell with Asymmetrical Ground Gating and Built-In Read-Assist Schemes for Application in Limited-Energy Environments

Journal Title: ECS Journal of Solid State Science and Technology

Article Type: paper

Copyright Information: © 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

Publication dates

Date Received: 2022-01-29

Date Accepted:

Online publication date: 2022-03-29

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