Funding for this research was provided by:
National Natural Science Foundation of China (21972120)
Article Title: High-Efficiency and High-Quality Photogalvanic Etching of the Silicon Doped N-Type Gallium Nitride Using Potassium Peroxomonosulfate Oxidant
Journal Title: ECS Journal of Solid State Science and Technology
Article Type: paper
Copyright Information: © 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2021-12-07
Date Accepted: 2022-04-20
Online publication date: 2022-05-02